1 power transistors 2sd1538, 2sd1538a silicon npn epitaxial planar type for low-voltage switching complementary to 2sb1070 and 2sb1070a n features l low collector to emitter saturation voltage v ce(sat) l high-speed switching l n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 40 50 20 40 5 8 4 25 1.3 150 C55 to +150 unit v v v a a w ?c ?c 2sd1538 2sd1538a 2sd1538 2sd1538a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 40v, i e = 0 v cb = 50v, i e = 0 v eb = 5v, i c = 0 i c = 10ma, i b = 0 v ce = 2v, i c = 0.1a v ce = 2v, i c = 1a i c = 2a, i b = 0.1a i c = 2a, i b = 0.1a v ce = 5v, i c = 0.5a, f = 10mhz i c = 2a, i b1 = 0.2a, i b2 = C 0.2a, v cc = 20v min 20 40 45 90 typ 120 0.2 0.5 0.1 max 50 50 50 260 0.5 1.5 unit m a m a v v v mhz m s m s m s 2sd1538 2sd1538a 2sd1538 2sd1538a * h fe2 rank classification rank q p h fe2 90 to 180 130 to 260 unit: mm 1:base 2:collector 3:emitter n type package 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 unit: mm 8.5 0.2 4.4 0.5 2.0 10.0 0.3 14.7 0.5 4.4 0.5 6.0 0.3 3.4 0.3 2.54 0.3 5.08 0.5 1.0 0.1 0.8 0.1 1.5 +0 ?.4 3.0 +0.4 ?.2 0 to 0.4 1.1 max. r0.5 r0.5 123 1:base 2:collector 3:emitter n type package (ds)
2 power transistors 2sd1538, 2sd1538a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c t on , t stg , t f i c area of safe operation (aso) 0 150 125 100 25 75 50 0 40 30 10 25 35 20 5 15 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =1.3w) (1) (2) (3) (4) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 6 5 4 3 2 1 i b =60ma 50ma 40ma 30ma 20ma 10ma 5ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 v ce =2v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =5v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 08 26 47 15 3 0.01 10 1 0.1 0.03 0.3 3 pulsed t w =1ms duty cycle=1% i c /i b =10 (i b1 =? b2 ) v cc =20v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c 10ms 300ms t=1ms 2sd1538 2sd1538a collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sd1538, 2sd1538a r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 2 (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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